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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35726


    Title: InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
    Authors: Wu,LW;Chang,SJ;Su,YK;Tsai,TY;Wen,TC;Kuo,CH;Lai,WC;Sheu,JK;Tsai,JM;Chen,SC;Huang,BR
    Contributors: 光電科學研究中心
    Keywords: LIGHT-EMITTING-DIODES;METAL ULTRAVIOLET PHOTODETECTORS;LOW-OPERATION VOLTAGE;QUANTUM-WELL BLUE;ALXGA1-XN/GAN SUPERLATTICES;ACCEPTOR ACTIVATION;GAN
    Date: 2003
    Issue Date: 2010-07-07 15:49:56 (UTC+8)
    Publisher: 中央大學
    Abstract: Nitride-based light-emitting diodes (LEDs) with Si-doped n(+)-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 x 10(-2) Omega-cm(
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[光電科學研究中心] 期刊論文

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