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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35732


    Title: Nitride-based green light-emitting diodes with high temperature GaN barrier layers
    Authors: Wu,LW;Chang,SJ;Su,YK;Chuang,RW;Wen,TC;Kuo,CH;Lai,WC;Chang,CS;Tsai,JM;Sheu,JK
    Contributors: 光電科學研究中心
    Keywords: QUANTUM-WELL BLUE;INGAN-GAN;GROWTH TEMPERATURE;SI
    Date: 2003
    Issue Date: 2010-07-07 15:50:13 (UTC+8)
    Publisher: 中央大學
    Abstract: High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[光電科學研究中心] 期刊論文

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