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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35734


    Title: Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
    Authors: Kuo,CH;Chang,SJ;Su,YK;Wu,LW;Chen,JF;Shen,JK;Tsai,JM
    Contributors: 光電科學研究中心
    Keywords: METAL ULTRAVIOLET PHOTODETECTORS;LOW-OPERATION VOLTAGE;ALXGA1-XN/GAN SUPERLATTICES;ACCEPTOR ACTIVATION;GAN;BLUE
    Date: 2003
    Issue Date: 2010-07-07 15:50:15 (UTC+8)
    Publisher: 中央大學
    Abstract: The electrical properties of Si-doped n(+)-In0.23Ga0.77N/GaN SPS structure were investigated, and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement; showed that such a SPS structure exhibits a high sheet electron c
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[光電科學研究中心] 期刊論文

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