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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35750


    Title: Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
    Authors: Chiou,JW;Mookerjee,S;Rao,KVR;Jan,JC;Tsai,HM;Asokan,K;Pong,WF;Chien,FZ;Tsai,MH;Chang,YK;Chen,YY;Lee,JF;Lee,CC;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: EPITAXIAL GAN;MG;CONDUCTION;HYDROGEN;DIODES
    Date: 2002
    Issue Date: 2010-07-07 15:50:32 (UTC+8)
    Publisher: 中央大學
    Abstract: As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L-3-edge. The angle dependence of the XANES spectra shows that the Ga-N bonds
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

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