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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35758


    Title: InGaN/GaN light emitting diodes activated in O-2 ambient
    Authors: Kuo,CH;Chang,SJ;Su,YK;Chen,JF;Wu,LW;Sheu,JK;Chen,CH;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: P-TYPE GAN;CHEMICAL-VAPOR-DEPOSITION;MG;CONTACT;OXYGEN;FILMS
    Date: 2002
    Issue Date: 2010-07-07 15:50:41 (UTC+8)
    Publisher: 中央大學
    Abstract: Mg-doped GaN epitaxial layers were annealed in pure O-2 and pure N-2. It was found that we could achieve a low-resistive p-type GaN by pure O-2 annealing at a temperature as low as 400 degreesC. With a 500 degreesC annealing temperature, it was found that
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

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