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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35760


    Title: InGaN/GaN tunnel-injection blue light-emitting diodes
    Authors: Wen,TC;Chang,SJ;Wu,LW;Su,YK;Lai,WC;Kuo,CH;Chen,CH;Sheu,JK;Chen,JF
    Contributors: 光電科學研究中心
    Keywords: QUANTUM-WELL;TEMPERATURE-DEPENDENCE;LASER;GAN;PHOTODETECTORS;MODULATION;CAPTURE;DEVICE
    Date: 2002
    Issue Date: 2010-07-07 15:50:43 (UTC+8)
    Publisher: 中央大學
    Abstract: A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82 N electron emitter layer, we could increase the L
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[光電科學研究中心] 期刊論文

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