English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 23163592      Online Users : 453
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35762


    Title: Low temperature activation of Mg-doped GaN in O-2 ambient
    Authors: Kuo,CH;Chang,SJ;Su,YK;Wu,LW;Sheu,JK;Chen,CH;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: P-TYPE GAN;COMPENSATION
    Date: 2002
    Issue Date: 2010-07-07 15:50:44 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O-2 air and N-2. It was found that we could achieve a low-resistive p-type GaN by O-2-ambient annealing at a temperature as low as 400degre
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML510View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明