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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35766


    Title: n(+)-GaN formed by Si implantation into p-GaN
    Authors: Sheu,JK;Tun,CJ;Tsai,MS;Lee,CC;Chi,GC;Chang,SJ;Su,YK
    Contributors: 光電科學研究中心
    Keywords: OHMIC CONTACT;LUMINESCENCE
    Date: 2002
    Issue Date: 2010-07-07 15:50:49 (UTC+8)
    Publisher: 中央大學
    Abstract: Si-28(+) implantation into Mg-doped GaN, followed by thermal annealing in N-2 was performed to achieve n(+)-GaN layers. Multiple implantation was used to form a uniform Si implanted region. It was found that the carrier concentration of the films changed
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[光電科學研究中心] 期刊論文

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