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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35770


    Title: Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching
    Authors: Wen,TC;Lee,WI;Sheu,JK;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: CHEMICAL-VAPOR-DEPOSITION;THREADING DISLOCATIONS;LAYERS;MICROSCOPY;DIODES
    Date: 2002
    Issue Date: 2010-07-07 15:50:53 (UTC+8)
    Publisher: 中央大學
    Abstract: This work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet etching. A mixture of H2SO4 and H3PO4 was used as an etching solution. SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學研究中心] 期刊論文

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