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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35774


    Title: The doping process and dopant characteristics of GaN
    Authors: Sheu,JK;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: MG-DOPED GAN;P-TYPE GAN;VAPOR-PHASE EPITAXY;MOLECULAR-BEAM EPITAXY;LIGHT-EMITTING-DIODES;N-TYPE GAN;MOBILITY ALGAN/GAN HETEROSTRUCTURES;RESISTANCE OHMIC CONTACTS;GROUP-III NITRIDES;YELLOW LUMINESCENCE
    Date: 2002
    Issue Date: 2010-07-07 15:50:57 (UTC+8)
    Publisher: 中央大學
    Abstract: The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O,
    Relation: JOURNAL OF PHYSICS-CONDENSED MATTER
    Appears in Collections:[光電科學研究中心] 期刊論文

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