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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35780


    Title: Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition
    Authors: Wen,TC;Lee,WI;Sheu,JK;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: MG;GAN
    Date: 2001
    Issue Date: 2010-07-07 15:51:02 (UTC+8)
    Publisher: 中央大學
    Abstract: This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier conce
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學研究中心] 期刊論文

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