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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35782


    Title: Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices
    Authors: Sheu,JK;Kuo,CH;Chen,CC;Chi,GC;Jou,MJ
    Contributors: 光電科學研究中心
    Keywords: INDIUM TIN OXIDE;LIGHT-EMITTING-DIODES;P-TYPE GAN;LUMINESCENCE;BAND
    Date: 2001
    Issue Date: 2010-07-07 15:51:05 (UTC+8)
    Publisher: 中央大學
    Abstract: Low resistivity Mg-doped Al0.15Ga0.85N/GaN strained-layer superlattices (SLs) were grown. In these SLs, the maximum hole concentration is 3 x 10(18) cm(-3) at room temperature, i.e., larger than those for Mg-doped Al0.15Ga0.85N and GaN bulk layers with th
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學研究中心] 期刊論文

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