Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35790

Title:	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer
Authors:	Sheu,JK;Tsai,JM;Shei,SC;Lai,WC;Wen,TC;Kou,CH;Su,YK;Chang,SJ;Chi,GC
Contributors:	光電科學研究中心
Keywords:	INDIUM TIN OXIDE;OHMIC CONTACT;N-GAN;ACTIVATION
Date:	2001
Issue Date:	2010-07-07 15:51:13 (UTC+8)
Publisher:	中央大學
Abstract:	InGaN/GaN multiple-quantum-well light-emitting diode (LED) structures including a Si-doped In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer were grown by metalorganic vapor phase epitaxy. The In0.23Ga0.77N/GaN(n(+))-GaN(p) tunneli
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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