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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35796


    Title: The doping process of p-type GaN films
    Authors: Chi,GC;Kuo,CH;Sheu,JK;Pan,CJ
    Contributors: 光電科學研究中心
    Keywords: MOLECULAR-BEAM EPITAXY;MG;PHOTOLUMINESCENCE
    Date: 2000
    Issue Date: 2010-07-07 15:51:20 (UTC+8)
    Publisher: 中央大學
    Abstract: The formation of p-type GaN him is a key technology in developing optoelectronic devices. P-type doping (concentration similar to 10(17) cm(-3)) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The H
    Relation: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    Appears in Collections:[光電科學研究中心] 期刊論文

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