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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/3720


    Title: 無機奈米粒子對於有機光阻修飾上之應用;The modification of the organic resist after incorperate inorganic nano particles
    Authors: 吳承翰;cheng-han Wu
    Contributors: 化學工程與材料工程研究所
    Keywords: 微影;電子束;奈米;E-beam;lithography;nano
    Date: 2002-07-13
    Issue Date: 2009-09-21 12:20:57 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 電子束微影系統是近年來積極發展的先進微影技術之一,在本次研究中,首先定義出新正型光阻劑(DSE-1010)在電子束直寫系統的最佳製程條件,諸如曝光劑量為7.38μC/cm2 (for 200nm Trench),軟烤最佳條件為95℃/120sec與曝後烤最佳條件為115℃/120sec。之後探討在Class 10 級無塵室環境下軟烤及硬烤後時間延遲對密集溝溝寬變化的影響,及在顯影過程中所造成密集溝與孤立溝溝寬誤差的原因,並且對在高劑量下,光阻所展現出來的負型光阻性質,以傅立葉轉換紅外線光譜儀探討其化學結構之改變。接著評估是否可以使用熱流的方法以期使此新電子束光阻能有更小之解析能力,影響熱流的參數為熱流烘烤溫度、烘烤時間以及圖案的排列密度,最後在驗證新正型光阻劑(DSE-1010)的抗蝕刻性質,在做完熱流製程後,仍有能力將圖形轉移至晶圓上。 有感於光阻劑解析能力通常因阻劑厚度減少而變高,所以在越微小之積體電路圖形往往會使用越薄之阻劑厚度,但是因阻劑厚度不夠,而使得在圖形轉移時則會產生過蝕刻(over etching)的情形,如在轉移零層光罩之圖形時,往往使用硬罩膜(hard mask)來克服阻劑厚度不足之問題,在之後的實驗中,嘗試在光阻內加入如C60奈米粒子以解決圖形轉移時因厚度不足而產生抗蝕刻方面之問題,並以TEM圖形解釋抗蝕刻力增加之原因,並將經過修飾過之光阻劑在微影特性上重新定義出最佳之製程條件,結果其對比度增加,並且保有原本之微影解析能力,在抗蝕刻能力方面,也有相當程度的提升。 ABSTRACT In this paper, we characterize DES-1010 E-Beam resist for high-resolution electron beam lithography from low to high dose energy. Results indicate the DSE-1010 is very high sensitive for high throughput E-Beam lithography applications. In general, at optimum condition, the trench-width can be easily down to 80 nm. When the dose increased, the character of DES-1010 had been changed from positive to negative, the change of chemical structure was observed by FTIR. It could get 500 nm trench also. Many factors influence performance of resists such as soft bake, post exposure bake, and exposure dose, which are discussed and optimize.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

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