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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/3728


    題名: 電遷移效應對錫微結構影響之探討;Electromigration effect on the microstructure of Tin foil
    作者: 王祥文;Hisang-Wen Wang
    貢獻者: 化學工程與材料工程研究所
    關鍵詞: 電遷移效應;electromigration;solder
    日期: 2002-06-27
    上傳時間: 2009-09-21 12:21:08 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 摘要 隨著積體電路的發展元件尺寸不斷縮小,電遷移效應已造成內層導線缺陷,對導線可靠度造成影響。於未來隨著電子產品輕、薄、短、小化發展,覆晶(flip chip)封裝勢必成為市場主流,此時通過銲點的電流密度可能高達104 A/cm2,電遷移效應將對銲點的可靠度造成影響。因為錫為銲料常見的元素之一,本論文的目的即在探討電遷移效應對錫微結構影響。實驗的內容分為兩部份:第一部份為通電實驗,分別於室溫與100℃環境下進行實驗,所施加電流密度為2 ×104 A/cm2。第二部份為對照實驗,於200℃環境下不施加電流進行熱處理。 在通電後可發現,於陰極(cathode)區域形成孔洞,而於陽極(anode)區域形成凸起,有趣的是凸起方向均一致。於室溫與100℃環境下進行實驗,由實驗結果發現溫度較高將加速電遷移效應對微結構影響。 Abstract Electromigration is a generic reliability issue in very large scale integrated device. Often, it will cause the failure of interconnect line. As the trend of miniaturization in flip chip package continues, electromigration in solder joints becomes a serious reliability issue. Tin is the most common element in solder alloys. The focus of this research work was to study the electromigration effect on the microstructure of tin foil. The experimental content was divided into two parts. The first part is the tin stripe stressed by current density of 2 × 104 A/cm2 at room temperature and 100 0C, respectively. The second part the thermal annealing process for 200 0C. The purpose of the second part is to compare the current effect with sample in the first. After current stressing, hillocks were observed in the anode region and voids were observed in the cathode region. Interestingly, we found that the hillocks were tilted. Besides, we also found that the electromigration effect will become serious on the tin microstructure.
    顯示於類別:[化學工程與材料工程研究所] 博碩士論文

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