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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/3810

    Title: 奈米壓印微影技術之脫模劑與表面能的研究;Study of Mold Releasing Agent and Surface Energy for Nanoimprint Lithography
    Authors: 謝坤峰;Kun-Fong Shieh
    Contributors: 化學工程與材料工程研究所
    Keywords: 奈米壓印微影技術;表面能;surface energy;nanoimprint
    Date: 2004-06-25
    Issue Date: 2009-09-21 12:23:12 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 在本篇論文中分為兩個研究的主題。一個是應用在奈米微壓印製程上之脫模劑與表面能之研究;另一個是電子束曝光的溫度分佈研究。 此段為第一個主題。奈米微壓印製程主要仰賴mold與光阻間的接觸,是故在此二者接觸時的濕性與黏滯性質是關鍵的議題。而mold與光阻接觸時的黏滯力強度是由表面能大小決定。在此研究中,我們利用FPTS、FOTS在mold表面形成自組裝薄膜,其用途是在奈米微壓印製程中當作一反黏滯層以利脫模。FPTS、FOTS的形成機制我們利用FTIR來驗證。並且我們利用接觸角系統、橢圓測厚儀、原子力顯微鏡等機台來探究FPTS、FOTS其本身性質如:表面能、薄膜厚度、表面粗糙度等。由結果我們證明了自組裝FOTS的mold在與光阻壓印完分開後,其光阻較少缺陷且表面粗糙度較低,這是因為FOTS較FPTS有較多的-CF2,導致表面能較低,是故分開效果較佳。除此之外,表面能不只影響了壓印後光阻的缺陷多寡,也直接影響了在壓印時圖案的解析能力。另一方面,我們使用Oss&Good 理論去估計一些光阻、不同狀態下的二氧化矽、不同組成的PMMA-PMAAM-PS共聚高分子的表面能。其目的在於建立一個表面能的資料庫,而在未來能夠作為在奈米微壓印製程選擇壓印材料的參考。 此段為第二個主題。在此部份的研究,我們發展了一套方法,可去估計光阻在電子束微影曝光時的溫度分佈。我們所選用的光阻有SU-8、NEB、193光阻。由結果我們可看到SU-8光阻的溫度分佈較另外二者較高,這是因為SU-8是屬於厚膜光阻,溫度較難散去,是故溫度較高。再者,此方法有以下等優點:簡單、成本低…..。 There are two major topics in this thesis. One is the research of mold release agents and surface energy for nanoimprint lithography . The other is the temperature distribution of e-beam patterning. The following is the first major topic. As all imprint techniques rely on contact between resist and mold, the wetting and adhesion characteristics of the polymer materials to the substrate are critical issues. The strength of adhesion between mold surface and resist is characterized by the amount of energy required to separate the two materials. In this study, trichloro(3,3,3-trifluoropropyl)silane (FPTS) and trichloro(1H, 1H, 2H, 2H- perfluorooctyl)silane (FOTS) are used for self-assembled monolayers (SAM) on mold as releasing and anti-sticking layer for nanoimprint. Their formation mechanism can be provided the evidence of a chemical reaction between the head groups of different fluorinated trichlorosilanes and the surface hydroxyl groups by FTIR. We use contact angle system、ellipisometer、atomic force microscopy to discuss the nature properties of SAMs including surface energy,film thickness,surface roughness etc. The results demonstrated that the resist surface revealed the lower defect and roughness after separation of imprinting by mold with SAMs of FOTS monolayer, ascribed to the FOTS monolayer with a larger amount of -CF2 than FPTS monolayer resulted in lower surface energy. Furthermore, the surface energy effect influenced not only the defect on the resist after separation, but the resolution of patterning of nanoimprint directly. In addition,we use Oss&Good theory to estimate the surface energy of some materials including some photoresists ,silicon dioxide,copolymers of PMMA-PMAAM-PS . In this purpose, we hope establishing a database to be used as a reference in selecting imprinted materials for nanoimprint lithography. The following is the second major topic. In this research, we develop a new method to estimate the temperature distribution of e-beam patterning. The resists we choose are SU-8,NEB,193 photoresists. The results demonstrated SU-8 photoresist has higher temperature distribution than the other ones because of its thicker film. This method has some advantages like simple、cheap etc.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

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