我們利用Blech結構，對Sn、Sn0.7Cu、Sn3.0Cu與Sn1.0Ni薄膜合金進行電遷移效應的探討。由實驗結果中發現，此四種不同的薄膜合金皆擁有不同的遷移速率，其遷移速率由大到小為: Sn0.7Cu > Sn > Sn3Cu > Sn1.0Ni。我們認為，共晶組成之Sn0.7Cu有高密度的晶界(grain boundary)與較低的降服強度(yielding strength)特性，這二因子分別導致Sn0.7Cu有較快的遷移速率及較低的形變阻抗能力。且由各種不同長度的合金原子電遷移通量，我們可求得臨界長度(critical product)和臨界值(critical product)。Sn、Sn0.7Cu、Sn3.0Cu的臨界值(critical product)分別為:1500、500和1580 amp/cm。同時我們也發現，利用文獻報告的Sn擴散係數求得薄膜Sn之Z*值為97，而此結果相近於Sn塊材的文獻值80。 By using Blech structure, we have studied the EM behaviors on four different Sn(Cu) and Sn(Ni) alloys, which are Sn, Sn0.7Cu, Sn3.0Cu, and Sn1.0Ni. The EM rates of above alloys were determined and the order of the magnitudes is: Sn0.7Cu > Sn > Sn3Cu > Sn1.0Ni. Sn0.7Cu shows the highest EM rate among three Sn(Cu) alloys. The possible reasons are that eutectic Sn0.7Cu has a high density of grain boundary and a low yielding strength. Knowing the EM fluxes of alloy stripes in different lengths, the critical lengths and the critical products were determined. The critical products for Sn, Sn0.7Cu, and Sn3.0Cu are 1500 amp/cm, 500 amp/cm, and 1580 amp/cm, respectively. In this study, DZ* of Sn(Cu) alloys were obtained. Since, the Sn diffusivity in the Sn matrix is known, Z* of pure Sn can be further calculated to be 97, which is slightly larger than the literature value, 80.