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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38369


    Title: Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride
    Authors: Tun,CJ;Sheu,JK;Lee,ML;Hu,CC;Hsieh,CK;Chi,GC
    Contributors: 物理研究所
    Keywords: LIGHT-EMITTING-DIODES;OXIDE OHMIC CONTACTS;LOW-RESISTANCE;GAN;NI/AU;SPECTROSCOPY;PERFORMANCE;MECHANISM
    Date: 2006
    Issue Date: 2010-07-08 13:25:04 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, Al-doped ZnO (AZO) and Ni/AZO films were deposited on p-type GaN films followed by thermal annealing to form ohmic contacts. After thermal annealing, the resistivities of AZO films reduced from 5x10(-3) to 4-6x10(-4) Omega cm. Both as-depos
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    Appears in Collections:[物理研究所] 期刊論文

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