Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38454

Title:	Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition
Authors:	Kao,CJ;Kwon,YW;Heo,YW;Norton,DP;Pearton,SJ;Ren,F;Chi,GC
Contributors:	物理研究所
Keywords:	THIN-FILM TRANSISTORS;CONTACT RESISTANCE;SCHOTTKY CONTACTS;SURFACE BARRIERS;DEEP LEVELS;ZINC-OXIDE;N-ZNO;MOBILITY;CHANNEL;AG
Date:	2005
Issue Date:	2010-07-08 13:27:49 (UTC+8)
Publisher:	中央大學
Abstract:	ZnO thin film field effect transistors with 1.5-20 mu m gate width were fabricated using either a metal gate [metal-semiconductor field effect transistor (MESFET)] or a metal-oxide-semiconductor (MOS) gate. In both cases we found that use of a thick (simi
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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