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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38459


    Title: Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase
    Authors: Sheu,JK;Chen,SS;Lee,ML;Lai,WC;Chi,GC
    Contributors: 物理研究所
    Keywords: SCHOTTKY-BARRIER PHOTODETECTORS;CAP LAYER
    Date: 2005
    Issue Date: 2010-07-08 13:27:58 (UTC+8)
    Publisher: 中央大學
    Abstract: The following research describes low- temperature- grown (LT) GaN films grown by metallorganic vapor- phase epitaxy. Hall- effect measurements indicate that the resistivity of as- grown and annealed LT GaN films exceeds 10(11) Omega/square. LT GaN films e
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    Appears in Collections:[物理研究所] 期刊論文

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