Improved thermal stability CrB2 contacts on ZnO

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38474

Title:	Improved thermal stability CrB2 contacts on ZnO
Authors:	Ip,K;Khanna,R;Norton,DP;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
Contributors:	物理研究所
Keywords:	TI/AU OHMIC CONTACTS;SINGLE-CRYSTAL ZNO;R-PLANE SAPPHIRE;N-TYPE ZNO;LOW-RESISTANCE;ELECTRICAL CHARACTERIZATION;4H-SILICON CARBIDE;SCHOTTKY CONTACTS;SURFACE BARRIERS;DEEP LEVELS
Date:	2005
Issue Date:	2010-07-08 13:28:25 (UTC+8)
Publisher:	中央大學
Abstract:	Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB2 was studied using current-voltage, scanning
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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