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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38516


    Title: Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
    Authors: Sheu,JK;Lee,ML;Lai,WC;Tseng,HC;Chi,GC
    Contributors: 物理研究所
    Keywords: N-TYPE GAN;THERMAL-STABILITY;CONTACTS;PHOTODETECTORS;HEIGHT;GAAS;WSIX
    Date: 2005
    Issue Date: 2010-07-08 13:29:50 (UTC+8)
    Publisher: 中央大學
    Abstract: Undoped GaN/low-temperature (LT) GaN/WSi0.8 and undoped GaN/WSi0.8 Schottky barrier contacts were prepared. Introducing the LT GaN on top of the conventional structures markedly reduced the leakage current and increased the barrier height. The measured ba
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[物理研究所] 期刊論文

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