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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38539


    Title: Thermal stability of W2B and W2B5 contacts on ZnO
    Authors: Ip,K;Khanna,R;Norton,DP;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
    Contributors: 物理研究所
    Keywords: LIGHT-EMITTING-DIODES;SINGLE-CRYSTAL ZNO;R-PLANE SAPPHIRE;N-TYPE ZNO;OHMIC CONTACTS;LOW-RESISTANCE;ELECTRICAL CHARACTERIZATION;SCHOTTKY CONTACTS;SURFACE BARRIERS;DEEP LEVELS
    Date: 2005
    Issue Date: 2010-07-08 13:30:33 (UTC+8)
    Publisher: 中央大學
    Abstract: Rectifying contact formation on n-type bulk single crystal ZnO using novel W2B or W2B5 metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single An overlayer was
    Relation: APPLIED SURFACE SCIENCE
    Appears in Collections:[物理研究所] 期刊論文

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