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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38543


    Title: Transport properties of InN nanowires
    Authors: Chang,CY;Chi,GC;Wang,WM;Chen,LC;Chen,KH;Ren,F;Pearton,SJ
    Contributors: 物理研究所
    Keywords: INDIUM NITRIDE NANOWIRES;ELECTRON-TRANSPORT;THERMAL-STABILITY;OHMIC CONTACTS;BAND-GAP;GROWTH;TEMPERATURE;MECHANISM;NANORODS;INGAN
    Date: 2005
    Issue Date: 2010-07-08 13:30:41 (UTC+8)
    Publisher: 中央大學
    Abstract: The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the n-type InN nanowires with diameter > 100 nm was
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[物理研究所] 期刊論文

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