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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38565


    Title: Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors
    Authors: Kao,CJ;Sheu,JK;Lai,WC;Lee,ML;Chen,MC;Chi,GC
    Contributors: 物理研究所
    Keywords: ALGAN/GAN HETEROSTRUCTURES;MOBILITY TRANSISTORS;PASSIVATION
    Date: 2004
    Issue Date: 2010-07-08 13:31:22 (UTC+8)
    Publisher: 中央大學
    Abstract: This study examined the effect of GaN grown by metalorganic vapor phase epitaxy at low temperature (LT-GaN) on the surface of Al0.25Ga0.75N/GaN heterostructures. Depositing a high-resistivity LT-GaN surface layer on the Al0.25Ga0.75N/GaN heterostructures
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[Graduate Institute of Physics] journal & Dissertation

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