Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38578

Title:	Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
Authors:	Gwo,S;Wu,CL;Shen,CH;Chang,WH;Hsu,TM;Wang,JS;Hsu,JT
Contributors:	物理研究所
Keywords:	FUNDAMENTAL-BAND GAP;MOLECULAR-BEAM EPITAXY;HEXAGONAL INN;INDIUM NITRIDE;DEPENDENCE
Date:	2004
Issue Date:	2010-07-08 13:31:47 (UTC+8)
Publisher:	中央大學
Abstract:	High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-e
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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