Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

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題名:	Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments
作者:	Lee,SW;Chen,LJ;Chen,PS;Tsai,MJ;Liu,CW;Chen,WY;Hsu,TM
貢獻者:	物理研究所
關鍵詞:	SIZE DISTRIBUTION;ISLANDS;PHOTOLUMINESCENCE;SI(100);SIGE/SI
日期:	2004
上傳時間:	2010-07-08 13:31:55 (UTC+8)
出版者:	中央大學
摘要:	The pre-intermixing treatments of Ge quantum dots (QDs) were demonstrated to be effective in improving the size uniformity and preventing the formation of cone-shaped defects (CSD) in the Ge dots multilayers. The rapid decrease in density of Ge dots with
關聯:	APPLIED SURFACE SCIENCE
顯示於類別:	[物理研究所] 期刊論文

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