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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38616


    Title: Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers
    Authors: Pei,Z;Chen,PS;Lee,SW;Lai,LS;Lu,SC;Tsai,MJ;Chang,WH;Chen,WY;Chou,AT;Hsu,TM
    Contributors: 物理研究所
    Keywords: RADIATIVE RECOMBINATION;PHOTOLUMINESCENCE;GE
    Date: 2004
    Issue Date: 2010-07-08 13:32:59 (UTC+8)
    Publisher: 中央大學
    Abstract: Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5 mum are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 600 de
    Relation: APPLIED SURFACE SCIENCE
    Appears in Collections:[物理研究所] 期刊論文

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