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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38653


    Title: Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition
    Authors: Chang,WH;Chen,WY;Chou,AT;Hsu,TM;Chen,PS;Pei,ZW;Lai,LS
    Contributors: 物理研究所
    Keywords: PHONONLESS RADIATIVE RECOMBINATION;ISLAND FORMATION;MULTIPLE LAYERS;HUT CLUSTERS;PHOTOLUMINESCENCE;STRAIN;ALIGNMENT;EXCITONS;SIGE/SI;WELLS
    Date: 2003
    Issue Date: 2010-07-08 13:34:13 (UTC+8)
    Publisher: 中央大學
    Abstract: Photoluminescence investigations on stacked Ge/Si dots with different spacer thicknesses are presented. According to the emission energy shift in the Ge dots, we found that a thinner spacer layer will lead to remarkable Ge-Si intermixing during the stacki
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[物理研究所] 期刊論文

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