Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38667

Title:	Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
Authors:	Chang,SJ;Chen,CH;Su,YK;Sheu,JK;Lai,WC;Tsai,JM;Liu,CH;Chen,SC
Contributors:	物理研究所
Keywords:	LIGHT-EMITTING-DIODES;VOLTAGE
Date:	2003
Issue Date:	2010-07-08 13:34:40 (UTC+8)
Publisher:	中央大學
Abstract:	GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although t
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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