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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38703


    Title: Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
    Authors: Yeh,LS;Lee,ML;Sheu,JK;Chen,MG;Kao,CJ;Chi,GC;Chang,SJ;Su,YK
    Contributors: 物理研究所
    Keywords: ULTRAVIOLET PHOTODETECTORS;DETECTORS;PERFORMANCE
    Date: 2003
    Issue Date: 2010-07-08 13:35:49 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN ultraviolet photodiodes with (i.e. sample 1) and without (i.e. sample 2) Mg-doped AlGaN/GaN strained-layer superlattice structure were both fabricated. It was found that we could achieve a near constant dark current of around 3 and 7 nA/cm(2) for samp
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[物理研究所] 期刊論文

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