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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38755


    Title: Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN
    Authors: Sheu,JK;Lee,ML;Yeh,LS;Kao,CJ;Tun,CJ;Chen,MG;Chi,GC;Chang,SJ;Su,YK;Lee,CT
    Contributors: 物理研究所
    Keywords: SCHOTTKY-BARRIER DETECTORS;N-JUNCTIONS;PHOTODIODES
    Date: 2002
    Issue Date: 2010-07-08 13:37:32 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN n(+)-p junction diodes were fabricated by implanting Si atoms into p-GaN. It was shown that we could use these diodes as GaN-based planar photodetectors. It was found that the dark current density of the diodes was around 1.5 muA/cm(2) and 50 nA/cm(2)
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[物理研究所] 期刊論文

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