GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38795

Title:	GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
Authors:	Chen,CH;Chang,SJ;Su,YK;Chi,GC;Chi,JY;Chang,CA;Sheu,JK;Chen,JF
Contributors:	物理研究所
Keywords:	N-GAN;DETECTORS
Date:	2001
Issue Date:	2010-07-08 13:38:59 (UTC+8)
Publisher:	中央大學
Abstract:	Indium-tin-oxide (ITO) layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper annealing, we found that we could improve the optical properties of the ITO layers and achieve a maximum transmittance of 98% a
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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