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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38834


    Title: Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching
    Authors: Chen,CHS;Chang,SJ;Su,YKI;Chi,GC;Sheu,JK;Lin,IC
    Contributors: 物理研究所
    Date: 2001
    Issue Date: 2010-07-08 13:40:16 (UTC+8)
    Publisher: 中央大學
    Abstract: Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N-2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF po
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    Appears in Collections:[物理研究所] 期刊論文

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