Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N-2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF po
關聯:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
