Improved contact performance of GaN film using Si diffusion

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38856

Title:	Improved contact performance of GaN film using Si diffusion
Authors:	Lin,CF;Cheng,HC;Chi,GC;Bu,CJ;Feng,MS
Contributors:	物理研究所
Keywords:	N-TYPE GAN;OHMIC CONTACTS
Date:	2000
Issue Date:	2010-07-08 13:40:58 (UTC+8)
Publisher:	中央大學
Abstract:	In this letter, we investigate a metalization process for reducing the contact resistance on undoped GaN layers. The Si metal source was diffused successfully into the GaN films by using SiOx/Si/Gal2O3 structures. By using a high-temperature annealing
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	416	View/Open

社群 sharing