Luminescence of an InGaN/GaN multiple quantum well light-emitting diode

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38864

Title:	Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
Authors:	Sheu,JK;Chi,GC;Su,YK;Liu,CC;Chang,CM;Hung,WC;Jou,MJ
Contributors:	物理研究所
Keywords:	LASER;GAN
Date:	2000
Issue Date:	2010-07-08 13:41:13 (UTC+8)
Publisher:	中央大學
Abstract:	In GaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy (MOVPE). Band-gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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