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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38889


    Title: Room temperature study of low temperature grown Al0.3Ga0.7As/GaAs multiple quantum wells by modulation reflectance
    Authors: Lai,CY;Hsu,TM;Lin,CL;Wu,CC;Lee,WC
    Contributors: 物理研究所
    Keywords: DELTA-DOPED GAAS;FAST FOURIER TRANSFORMATION;FRANZ-KELDYSH OSCILLATIONS;III-V MATERIALS;ELECTROMODULATION REFLECTANCE;INTERDIFFUSION;DIFFUSION;AL;SUPERLATTICES;KINETICS
    Date: 2000
    Issue Date: 2010-07-08 13:42:02 (UTC+8)
    Publisher: 中央大學
    Abstract: We studied the subband energy levels in AlGaAs/GaAs multiple quantum wells grown at different temperatures (200-600 degrees C) by using the piezoreflectance and photoreflectance in room temperature. Under subsequent 30 s rapid-thermal annealing at differe
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[物理研究所] 期刊論文

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