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    题名: Density-dependent energy relaxation of hot electrons in InN epilayers
    作者: Yang,MD;Liu,YW;Shen,JL;Chen,CW;Chi,GC;Lin,TY;Chou,WC;Lo,MH;Kuo,HC;Lu,TC
    贡献者: 物理研究所
    关键词: QUANTUM DOTS;DYNAMICS;PHOTOLUMINESCENCE;SEMICONDUCTORS;PHONONS;GAN
    日期: 2009
    上传时间: 2010-07-08 13:59:22 (UTC+8)
    出版者: 中央大學
    摘要: This work investigates the dependence of the hot-electron energy relaxation in InN epilayers on electron density. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons was determined. Acoustic phonons have an important role in the energy relaxation of the hot electrons. The density-dependent electron energy loss rate in InN can be explained by a combination of longitudinal optical and acoustic phonon emissions. A slowing of energy loss rate at high electron densities was observed and attributed to piezoelectric coupling to acoustic phonons. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3056383]
    關聯: JOURNAL OF APPLIED PHYSICS
    显示于类别:[物理研究所] 期刊論文

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