Localized states in InxGa1-xN epitaxial film

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38948

Title:	Localized states in InxGa1-xN epitaxial film
Authors:	Chang,HS;Hsu,TM;Chuang,TF;Chen,WY;Gwo,S;Shen,CH
Contributors:	物理研究所
Keywords:	LIGHT-EMITTING-DIODES;INGAN QUANTUM DOTS;PHOTOLUMINESCENCE;TEMPERATURE;EMISSION;DYNAMICS;SHIFT;WELL
Date:	2009
Issue Date:	2010-07-08 14:00:04 (UTC+8)
Publisher:	中央大學
Abstract:	This study investigated localized states from In0.36Ga0.64N epitaxial film grown on a Si (111) substrate by performing macro-photoluminescence, micro-photoluminescence and time-resolved micro-photoluminescence experiments. Experimental data revealed two localized states - single and extended. The single localized state is a single-quantum-dot-like deep confined energy state, which is responsible for the bright line emissions. The extended localized state is a shallow confined energy state, which is related to a broad background emission. This work suggests that the origin of single and extended localized states is the indium-rich InxGa1-xN cluster and the spatial indium concentration fluctuation, respectively. (C) 2008 Elsevier Ltd. All rights reserved.
Relation:	SOLID STATE COMMUNICATIONS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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