Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/39000

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39000

题名:	Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition
作者:	Yang,CC;Wu,MC;Chang,CA;Chi,GC
贡献者:	物理研究所
关键词:	FIELD-EFFECT TRANSISTOR;GALLIUM NITRIDE;PHASE EPITAXY;SAPPHIRE;SUBSTRATE;DENSITY;DIODES
日期:	1999
上传时间:	2010-07-08 14:01:48 (UTC+8)
出版者:	中央大學
摘要:	High-quality GaN epitaxial layers with a multiple-pair buffer layer have been grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. Each pair of buffer layer consists of a 300 Angstrom thick GaN nucleation layer grown at a low temperature of 525 degrees C and a 1-4 mm thick GaN epitaxial layer grown at a high temperature of 1000 degrees C. The GaN samples with a multiple-pair buffer layer are characterized by double-crystal x-ray diffraction (DC-XRD), Hall method and photoluminescence (PL) at 300 K, and etch-pit density measurements. The optimized condition to obtain the best quality of GaN epitaxial layers is to grow the four-pair buffer layer with a pair thickness of 4 mm. The GaN samples with the optimized buffer layer exhibit a narrow full width at half maximum (FWHM) of 150 arcsec and a strong intensity in DC-XRD, a high electron mobility of 450 cm(2)/V s, a low background concentration of 3X10(17) cm(-3), a low etch-pit density of mid-10(5) cm(-2), and a narrow FWHM of 56 meV in PL spectrum. (C) 1999 American Institute of Physics. [S0021-8979(99)02712-7].
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	403	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....