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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39002


    Title: Effects of H-2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
    Authors: Yang,CC;Koh,PL;Wu,MC;Lee,CH;Chi,GC
    Contributors: 物理研究所
    Keywords: FIELD-EFFECT TRANSISTOR;N-TYPE GAN;GALLIUM NITRIDE;BUFFER LAYER;PHOTOLUMINESCENCE;OPTIMIZATION;RESONANCE;SAPPHIRE;DEFECTS;MOVPE
    Date: 1999
    Issue Date: 2010-07-08 14:01:51 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. The flow-rate ratio of H-2 on the upper stream to NH3 on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H-2 flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H-2/NH3 flow ratio of 1.0, we can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emis-sion in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm(2)/V-s and concentration of 1 x 10(18) cm(-3) at 300 K.
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[物理研究所] 期刊論文

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