High-transparency Ni/Au ohmic contact to p-type GaN

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题名:	High-transparency Ni/Au ohmic contact to p-type GaN
作者:	Sheu,JK;Su,YK;Chi,GC;Koh,PL;Jou,MJ;Chang,CM;Liu,CC;Hung,WC
贡献者:	物理研究所
关键词:	INDIUM TIN OXIDE;FIELD-EFFECT TRANSISTORS;N-GAN;RESISTANCE
日期:	1999
上传时间:	2010-07-08 14:02:07 (UTC+8)
出版者:	中央大學
摘要:	In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current-voltage (I-V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7 x 10-(2) Ohm cm(2) at an alloying temperature of 450 degrees C. In addition, the light transmittance of the Ni/Au (2 nm/6 nm) bilayer on p-type GaN was measured to be around 85% at 470 nm. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved. (C) 1999 American Institute of Physics. [S0003-6951(99)00816-5].
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[物理研究所] 期刊論文

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