Indium tin oxide ohmic contact to highly doped n-GaN

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题名:	Indium tin oxide ohmic contact to highly doped n-GaN
作者:	Sheu,JK;Su,YK;Chi,GC;Jou,MJ;Liu,CC;Chang,CM
贡献者:	物理研究所
关键词:	FIELD-EFFECT TRANSISTORS
日期:	1999
上传时间:	2010-07-08 14:02:13 (UTC+8)
出版者:	中央大學
摘要:	The electrical characteristics of the indium tin oxide (ITO) contacts on n-GaN with various doping concentrations have been studied. Ohmic behavior was observed for ITO films on highly doped n-GaN (n = 1 x 10(19) cm(-3)) without thermal annealing and the measured specific contact resistance was 5.1 x 10(-4) Omega cm(2). This result could be attributed to the formation of a tunneling junction on the heavily n-type GaN surface. However, as the thermal annealing was performed to the ITO/n-GaN (n = 1 x 10(19) cm(-3)) Ohmic contact, it exhibited Schottky characteristics. This result might be due to the microscopic interfacial reaction among In, Sn, O and GaN and their alloys which extend into GaN films, thereby influencing the electrical properties of ITO/n-GaN contacts. (C) 1999 Elsevier Science Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[物理研究所] 期刊論文

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