Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases

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题名:	Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases
作者:	Sheu,JK;Su,YK;Chi,GC;Jou,MJ;Liu,CC;Chang,CM;Hung,WC
贡献者:	物理研究所
关键词:	III-V NITRIDES
日期:	1999
上传时间:	2010-07-08 14:02:15 (UTC+8)
出版者:	中央大學
摘要:	This work investigates inductively coupled plasma (ICP) etching processes of GaN. Etching behaviors are also characterized by varying the ICP power, Cl-2/Ar or Cl-2/N-2 mixing ratio, radio-frequency (rf) power, and chamber pressure. Experimental results indicate that the etching profiles are highly anisotropic over the range of etching conditions. Maximum etching rates of 8200 Angstrom/min in Cl-2/Ar plasma and 8330 Angstrom/min in Cl-2/N-2 plasma are obtained as well. In addition, pressure, ICP power, Cl-2/Ar(N-2) flow ratio and rf power significantly influence etching rate and surface morphology. In particular, dc bias heavily influences the etching rates, suggesting that the ion-bombardment effect is an important factor of these etching processes. (C) 1999 American Institute of Physics. [S0021-8979(99)03903-1].
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

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