English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 22985994      Online Users : 441
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39067


    Title: Delta-ray production in silicon tracking systems for 2-50 GeV electrons
    Authors: Hou,SR;Ambrosi,G;Burger,WJ;Chang,YH;Chen,AE;Lin,WT;Produit,N;Ribordy,M
    Contributors: 物理研究所
    Keywords: MULTIPLE-SCATTERING;STRIP DETECTORS
    Date: 1998
    Issue Date: 2010-07-08 14:03:52 (UTC+8)
    Publisher: 中央大學
    Abstract: The production of F-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of T-cut = 500 keV is chosen. The delta-ray angular distribution is measured for electrons transmitting through a 320 mu m silicon wafer. The F-ray production rate is approximately 1.3 % within an angular region of 1-50 mrad. (C) 1998 Elsevier Science B.V. All rights reserved.
    Relation: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    Appears in Collections:[物理研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML294View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明