Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

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题名:	Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
作者:	Sheu,JK;Su,YK;Chi,GC;Jou,MJ;Chang,CM
贡献者:	物理研究所
关键词:	FIELD-EFFECT TRANSISTORS;OHMIC CONTACT;RESISTANCE;BARRIER;FILMS
日期:	1998
上传时间:	2010-07-08 14:04:00 (UTC+8)
出版者:	中央大學
摘要:	In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was also investigated by annealing the samples at various temperatures. In addition, current-voltage (I-V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)-V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600 degrees C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing. (C) 1998 American Institute of Physics. [S0003-6951(98)00525-7].
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[物理研究所] 期刊論文

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