Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39080

Title:	Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes
Authors:	Sheu,JK;Su,YK;Chang,SJ;Jou,MJ;Liu,CC;Chi,GC
Contributors:	物理研究所
Keywords:	ATOMIC REARRANGEMENT;WINDOW LAYER;LASERS;TECHNOLOGY;SILICON
Date:	1998
Issue Date:	2010-07-08 14:04:16 (UTC+8)
Publisher:	中央大學
Abstract:	This paper investigates the differences of wafer-bonded n-(Al0.7Ga0.3)(0.5)In0.5P/n-GaP, n-Ga0.5In0.5P/n-GaP and n-GaP/n-GaP hetero-interfaces. The current-voltage characteristics have been demonstrated to be a result of different wafer cleaning methods. Bonded interfaces were also characterised by scanning electron microscopy and transmission electron micoscopy. In addition, an (AlxGa1-x)(0.5)In0.5P light-emitting diode (LED) was fabricated by wafer direct bonding technique. The luminous intensity of the wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP LED is about two times brighter than the conventional device with an absorbing GaAs substrate.
Relation:	IEE PROCEEDINGS-OPTOELECTRONICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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