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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39100


    題名: Photoluminescence spectroscopy of Mg-doped GaN
    作者: Sheu,JK;Su,YK;Chi,GC;Pong,BJ;Chen,CY;Huang,CN;Chen,WC
    貢獻者: 物理研究所
    關鍵詞: MOLECULAR-BEAM EPITAXY;LIGHT-EMITTING DIODES;P-TYPE GAN;EMISSION;DEFECTS
    日期: 1998
    上傳時間: 2010-07-08 14:04:53 (UTC+8)
    出版者: 中央大學
    摘要: We have grown Mg-doped GaN films by metalorganic chemical vapor deposition with various CP2Mg flow rates. After 750 degrees C postgrowth annealing, p-type GaN films with carrier concentrations and mobilities about 2 X 10(17)/cm(3) and 10 cm(2)/V s, respectively, have been achieved. A dominant photoluminescence (PL) line around 2.9 eV was observed at room temperature. By studying the dependence of PL on excitation density at 20 K, the emission line around 2.95 eV can be attributed to a donor-to-acceptor pair transition rather than to a conduction band-to-impurity transition involving the Mg-related deep level. We suggest that the DAP transition line is caused by a Mg related deep level at about 510 meV above the valence band. It is much deeper than the acceptor level at 250 meV commonly produced by the Mg dopants. (C) 1998 American Institute of Physics. [S0021-8979(98)02720-0]
    關聯: JOURNAL OF APPLIED PHYSICS
    顯示於類別:[物理研究所] 期刊論文

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