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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39109


    Title: The Fermi level of annealed low-temperature GaAs on Si-delta-doped GaAs grown by molecular beam epitaxy
    Authors: Lee,WC;Hsu,TM;Wang,SC;Chang,MN;Chyi,JI
    Contributors: 物理研究所
    Keywords: FRANZ-KELDYSH OSCILLATIONS;ELECTROMODULATION;LAYERS;EXCESS
    Date: 1998
    Issue Date: 2010-07-08 14:05:11 (UTC+8)
    Publisher: 中央大學
    Abstract: Photoreflectance has been used to study the Fermi level of annealed low-temperature GaAs in sample structures composed of low-temperature GaAs on top of Si-delta-doped GaAs. The diffusion of As precipitates across the interface between low-temperature GaAs and normal GaAs is observed by cross-sectional imaging via transmission electron microscopy. We have calculated the Fermi-level pinning in low-temperature GaAs by including the Si-delta-doped carrier concentration correction due to the accumulation of As precipitates. The Fermi level is found to decrease from 0.7 to 0.5 eV below the conduction band when the annealing temperature is increased from 600 degrees C to 900 degrees C. This may be explained with the buried Schottky barrier model. (C) 1998 American Institute of Physics.
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[物理研究所] 期刊論文

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